Product Name: High-Thermal Conductivity Aluminum Nitride (AlN) Ceramic Heater
Product Material: High-Purity Aluminum Nitride Ceramic (AlN), internal tungsten (W) or molybdenum (Mo) heating circuits
Material Characteristics: Ultra-high thermal conductivity (180-230 W/m·K), High electrical resistivity even at elevated temperatures, Coefficient of thermal expansion (CTE) matching Silicon (4.5×10⁻⁶/°C), Excellent plasma resistance and chemical stability, Superior temperature uniformity across the heating surface, High mechanical strength and dielectric properties
Application Fields: Wafer heating and processing, Vacuum deposition systems (CVD/PVD), Rapid Thermal Processing (RTP), Analytical instrumentation, High-temperature testing stages, Power module baseplates with heating functions, Medical sterilization equipment
Application Industries: Broad Semiconductor (wafer baking, etching), Aerospace (thermal management), Biomedical (PCR thermal cyclers), Fluid Control (gas pre-heaters), Advanced Machinery (precision hot plates), New Energy (battery testing thermal stages), Petrochemical (high-temp sensors), Electronic Engineering (MEMS packaging)
Processing Difficulties: Achieving high-reliability co-firing of ceramic and refractory metal circuits, Maintaining ultra-flat surface accuracy (micron-level) after high-temperature sintering, Managing precise temperature uniformity across large surface areas, Controlling the purity and grain boundaries to optimize thermal paths, Designing durable electrical lead attachments for high-temperature vacuum environments
Processing Flow: AlN powder preparation and slurry casting → Internal circuit screen printing → Multi-layer lamination and co-firing → High-temperature pressureless or hot-press sintering → Precision CNC grinding and laser shaping → Ultra-precision surface polishing → Terminal metallization and lead welding → Thermal imaging and uniformity testing → Insulation and reliability screening → Cleanroom packaging
Delivery Period: Standard geometry heaters: 60-90 days, Customized multi-zone/high-precision heaters: 90-120 days
This Aluminum Nitride (AlN) Ceramic Heater combines exceptional thermal performance with high dielectric strength to deliver precise, rapid heating for sensitive industrial processes. Designed primarily for the semiconductor industry, it offers a thermal expansion coefficient closely matched to silicon, minimizing stress during wafer processing. Unlike traditional metallic or alumina heaters, AlN heaters provide significantly faster heat transfer and superior temperature uniformity, ensuring consistent results in vacuum, plasma, and high-temperature environments.
Key Features
Exceptional Thermal Uniformity: Minimized temperature gradients across the surface for critical process stability.
Rapid Thermal Response: High thermal conductivity allows for fast ramp-up and cool-down cycles.
Silicon CTE Matching: Ideal for semiconductor applications to prevent wafer warping and stress cracks.
Plasma & Corrosion Resistance: Robust durability in harsh chemical and plasma-enhanced environments.
Cleanroom Compatible: Ultra-low outgassing and zero metallic contamination for sensitive electronics.
