Product Name: High Thermal Conductivity Ceramic Plates
Product Material: Aluminum Nitride (AlN)/Silicon Carbide (SiC))
Material Characteristics: High thermal conductivity, excellent electrical insulation, thermal shock resistance, high temperature stability, low thermal expansion
Application Fields: Power electronics cooling, LED heat dissipation, semiconductor packaging, laser equipment, microwave devices
Application Industries: Power electronics, semiconductor, telecommunications, automotive electronics, aerospace
Processing Challenges: Large-size thin plate flatness control, metallization bonding strength, thermal stress management, surface quality maintenance
Processing Flow: Powder preparation → Forming → High-temperature sintering → Precision grinding → Metallization → Inspection → Packaging
Delivery Time: 25-35 days, 40-50 days for customized requirements
High Thermal Conductivity Ceramic Plates are precision-engineered components specifically designed for applications requiring exceptional thermal management performance, reliable operation in extreme temperature environments, and outstanding thermal shock resistance. Manufactured from advanced ceramic materials including aluminum nitride, silicon carbide and beryllium oxide, these plates deliver superior performance in thermal dissipation applications, outperforming traditional materials through their excellent thermal conductivity, electrical insulation properties, and thermal stability.
Key Features:
Exceptional Thermal Conductivity - High thermal conductivity (AlN: 170-200 W/mK, SiC: 120-170 W/mK) provides outstanding heat dissipation performance, ensuring efficient thermal management in high-power applications and significantly reducing device operating temperatures.
Excellent Thermal Shock Resistance - Withstands rapid temperature changes exceeding 800°C without cracking or degradation, maintaining structural integrity in applications involving frequent thermal cycling and extreme temperature variations.
Superior Electrical Insulation - High volume resistivity (>10¹⁴ Ω·cm) and dielectric strength (>15-20 kV/mm) provide reliable electrical isolation while enabling efficient heat transfer, ensuring safe operation in high-voltage power applications.
Matched Thermal Expansion - Low thermal expansion coefficient (AlN: 4.5×10⁻⁶/K, SiC: 4.0×10⁻⁶/K) closely matches that of semiconductor materials, minimizing thermal stress at critical interfaces and enhancing reliability in electronic packages.
High Temperature Stability - Withstands continuous operation at temperatures up to 1800°C (SiC) and 800°C (BeO) while maintaining excellent mechanical and thermal properties, suitable for extreme temperature environments.
Precision Surface Quality - Achieves superior surface flatness (<15 μm/in) and finish quality (Ra < 0.1 μm), ensuring perfect thermal contact with heat-generating components and maximizing heat transfer efficiency.
